Aluminum nitride-based semiconductor deep ultraviolet light-emitting device
文献类型：专利
| 作者 | YAMAMOTO, SHUHICHIROH; UETA, YOSHIHIRO |
| 发表日期 | 2018-03-22 |
| 专利号 | US20180083173A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Aluminum nitride-based semiconductor deep ultraviolet light-emitting device |
| 英文摘要 | A vertically structured, aluminum nitride-based semiconductor deep ultraviolet light-emitting device is provided that exhibits a high light emission efficiency and an improved yield. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device includes: a conductive support substrate; a porous metal film having a conductive macroporous structure with a pore rate of from 10% to 50% inclusive; and an aluminum nitride-based semiconductor layer structural body with a light-emitting layer, the conductive support substrate and the aluminum nitride-based semiconductor layer structural body being bonded with the porous metal film interposed therebetween for electrical connection, wherein the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of from 220 nm to 300 nm inclusive. |
| 公开日期 | 2018-03-22 |
| 申请日期 | 2017-09-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54820]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, SHUHICHIROH,UETA, YOSHIHIRO. Aluminum nitride-based semiconductor deep ultraviolet light-emitting device. US20180083173A1. 2018-03-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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