Sealed semiconductor light emitting device
文献类型：专利
| 作者 | LEI, JIPU; SCHIAFFINO, STEFANO; NICKEL, ALEXANDER H. |
| 发表日期 | 2018-11-08 |
| 专利号 | US20180323353A1 |
| 著作权人 | LUMILEDS LLC |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Sealed semiconductor light emitting device |
| 英文摘要 | A light-emitting device is described herein. The device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The device also includes a metal layer with openings formed therein and filled with an insulating material. The openings separate the metal layer into a first portion that is electrically isolated from a second portion. The first portion is coupled to the n-type region and the second portion coupled to the p-type region. The device also includes conductive stacks. A first surface of each of the conductive stacks contacts a surface of the metal layer opposite the semiconductor structure. A respective gap is positioned between each of the conductive stacks. A body is in direct contact with a second surface of each of the conductive stacks that is opposite the first surface. |
| 公开日期 | 2018-11-08 |
| 申请日期 | 2018-07-09 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54904]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMILEDS LLC |
| 推荐引用方式 GB/T 7714 | LEI, JIPU,SCHIAFFINO, STEFANO,NICKEL, ALEXANDER H.. Sealed semiconductor light emitting device. US20180323353A1. 2018-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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