Etendue enhancement for light emitting diode subpixels
文献类型：专利
| 作者 | DANESH, FARIBA; LEUNG, BENJAMIN; LAU, TSUN; TEZCAN, ZULAL; TSAI, MIAO-CHAN; BATRES, MAX; CICH, MICHAEL JOSEPH |
| 发表日期 | 2019-03-21 |
| 专利号 | US20190088820A1 |
| 著作权人 | GLO AB |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Etendue enhancement for light emitting diode subpixels |
| 英文摘要 | A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer. |
| 公开日期 | 2019-03-21 |
| 申请日期 | 2018-09-06 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54919]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GLO AB |
| 推荐引用方式 GB/T 7714 | DANESH, FARIBA,LEUNG, BENJAMIN,LAU, TSUN,et al. Etendue enhancement for light emitting diode subpixels. US20190088820A1. 2019-03-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。