Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same
文献类型：专利
| 作者 | RYOU, JAE-HYUN; SHERVIN, SHAHAB; KIM, SEUNG HWAN |
| 发表日期 | 2019-02-07 |
| 专利号 | US20190044307A1 |
| 著作权人 | UNIVERSITY OF HOUSTON SYSTEM |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same |
| 英文摘要 | Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures. |
| 公开日期 | 2019-02-07 |
| 申请日期 | 2018-09-29 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNIVERSITY OF HOUSTON SYSTEM |
| 推荐引用方式 GB/T 7714 | RYOU, JAE-HYUN,SHERVIN, SHAHAB,KIM, SEUNG HWAN. Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same. US20190044307A1. 2019-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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