Iii-nitride surface-emitting laser and method of fabrication
文献类型：专利
| 作者 | FORMAN, CHARLES; LEE, SEUNGGEUN; YOUNG, ERIN; KEARNS, JARED; DENBAARS, STEVEN P.; SPECK, JAMES S.; NAKAMURA, SHUJI |
| 发表日期 | 2019-04-11 |
| 专利号 | WO2019070719A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Iii-nitride surface-emitting laser and method of fabrication |
| 英文摘要 | A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7λ or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation. |
| 公开日期 | 2019-04-11 |
| 申请日期 | 2018-10-02 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/55161]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | FORMAN, CHARLES,LEE, SEUNGGEUN,YOUNG, ERIN,et al. Iii-nitride surface-emitting laser and method of fabrication. WO2019070719A1. 2019-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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