Optoelectronic device based on a surface-trapped optical mode
文献类型:专利
作者 | LEDENTSOV, NIKOLAY; SHCHUKIN, VITALY |
发表日期 | 2019-07-18 |
专利号 | US20190222000A1 |
著作权人 | LEDENTSOV, NIKOLAY |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Optoelectronic device based on a surface-trapped optical mode |
英文摘要 | An optoelectronic device employs a surface-trapped TM-polarized optical mode existing at a boundary between a distributed Bragg reflector (DBR) and a homogeneous medium, dielectric or air. The device contains a resonant optical cavity surrounded by two DBRs, and an additional DBR section on top supporting the surface-trapped mode. Selective chemical transformation, like selective oxidation, etching or alloy composition intermixing form a central core and a periphery having different vertical profiles of the refractive index. Therefore, the longitudinal VCSEL mode in the core is non-orthogonal to the surface-trapped mode in the periphery, and the two modes can be transformed into each other. Such transformation allows fabrication of a number of optoelectronic devices and systems like a single transverse mode VCSEL, an integrated optical circuit operating as an optical amplifier, an integrated optical circuit combining a VCSEL and a resonant cavity photodetector, etc. |
公开日期 | 2019-07-18 |
申请日期 | 2019-03-26 |
状态 | 申请中 |
源URL | [http://ir.opt.ac.cn/handle/181661/55385] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | LEDENTSOV, NIKOLAY |
推荐引用方式 GB/T 7714 | LEDENTSOV, NIKOLAY,SHCHUKIN, VITALY. Optoelectronic device based on a surface-trapped optical mode. US20190222000A1. 2019-07-18. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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