Vcsel laser diode having a carrier confinement layer and method of fabrication of the same
文献类型：专利
| 作者 | OLIVIER, NICOLAS; JANY, CHRISTOPHE |
| 发表日期 | 2019-10-03 |
| 专利号 | US20190305518A1 |
| 著作权人 | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vcsel laser diode having a carrier confinement layer and method of fabrication of the same |
| 英文摘要 | A laser diode of the VC SEL type includes, superimposed on top of a substrate, a bottom Bragg mirror, a region of one or more quantum wells, and a top Bragg mirror. A section of the bottom Bragg mirror has an area that is less than that of a section of the top Bragg mirror, the sections being defined in planes parallel to the plane of the substrate. The laser diode further includes a peripheral region, constituted by a confinement material, situated between the substrate and the top Bragg mirror, and surrounding at least the bottom Bragg mirror. The laser diode is devoid of any laterally-oxidized layer. Thanks to the specific geometrical configuration of the laser diode, the charge carriers are confined, during operation, to the center of the laser diode. |
| 公开日期 | 2019-10-03 |
| 申请日期 | 2019-03-26 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/55561]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 推荐引用方式 GB/T 7714 | OLIVIER, NICOLAS,JANY, CHRISTOPHE. Vcsel laser diode having a carrier confinement layer and method of fabrication of the same. US20190305518A1. 2019-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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