Compliant universal substrates for epitaxial growth
文献类型：专利
| 作者 | LO, YU-HWA |
| 发表日期 | 1999-04-05 |
| 专利号 | AU1998094734A1 |
| 著作权人 | CORNELL RESEARCH FOUNDATION INC. |
| 国家 | 澳大利亚 |
| 文献子类 | 发明申请 |
| 其他题名 | Compliant universal substrates for epitaxial growth |
| 英文摘要 | Complaint universal (CU) substrates (10) and techniques for forming the same facilitate growth of epitaxial layers (18) comprised of materials which are highly lattice mismatched with the substrate material. The CU substrates employ very thin (e.g., 1-20 nm or less) substrate layers (14) which are loosely bonded to a thick bulk material base layer (12). Because of the loose bonding, the bonding energy of the atoms in the thin substrate layer is reduced, thus greatly increasing the flexibility of the thin substrate layer. This enables the substrate layer to absorb strain or stress imparted during the growth of lattice mismatched epitaxial layers, thus avoiding the formation of defects in the epitaxial layers. The thin substrate layer can be bonded at an angle relative to the base layer so that screw dislocations form which provide the desired reduction in bonding energy and increase in flexibility. Reducing bonding energy can be accomplished by making the base material porous at the top surface, or by patterning or roughing the top surface. |
| 公开日期 | 1999-04-05 |
| 申请日期 | 1998-09-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/56489]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CORNELL RESEARCH FOUNDATION INC. |
| 推荐引用方式 GB/T 7714 | LO, YU-HWA. Compliant universal substrates for epitaxial growth. AU1998094734A1. 1999-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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