Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
文献类型：专利
| 作者 | LO, YU-HWA; EJECKMAN, FELIX; ZHU, ZUHUA |
| 发表日期 | 2001-11-22 |
| 专利号 | US20010042503A1 |
| 著作权人 | NOVA CRYSTALS, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates |
| 英文摘要 | A method for forming low defect density epitaxial layers on lattice-mismatched substrates includes confining dislocations through interactions between the dislocations and the stress field in the epitaxial layer. This method is applicable to any heteroepitaxial material systems with any degree of lattice mismatch. The method includes choosing the desired epilayer and the top substrate layer for epitaxial growth, determining the lattice constant and thermal expansion coefficient of the final epilayer and the top substrate layer, bonding an additional substrate layer under the top substrate layer to form a composite substrate so that the desired epilayer has negative (positive) or zero thermal mismatch to the composite substrate if the lattice mismatch between the epilayer and the top substrate layer is positive (negative), and choosing a buffer layer to be deposited before the desired epilayer which is lattice matched to the epilayer. The chosen buffer layer should have a positive (negative) thermal mismatch to the entire substrate if the lattice mismatch is also positive (negative). |
| 公开日期 | 2001-11-22 |
| 申请日期 | 1999-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/56490]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NOVA CRYSTALS, INC. |
| 推荐引用方式 GB/T 7714 | LO, YU-HWA,EJECKMAN, FELIX,ZHU, ZUHUA. Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates. US20010042503A1. 2001-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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