Semiconductor device and semiconductor substrate, and method for fabricating the same
文献类型：专利
| 作者 | ISHIDA, MASAHIRO; NAKAMURA, SHINJI; ORITA, KENJI; IMAFUJI, OSAMU; YURI, MASAAKI |
| 发表日期 | 2002-09-26 |
| 专利号 | US20020137249A1 |
| 著作权人 | XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and semiconductor substrate, and method for fabricating the same |
| 英文摘要 | A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane. |
| 公开日期 | 2002-09-26 |
| 申请日期 | 1999-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/56492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | ISHIDA, MASAHIRO,NAKAMURA, SHINJI,ORITA, KENJI,et al. Semiconductor device and semiconductor substrate, and method for fabricating the same. US20020137249A1. 2002-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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