中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
ZnO based compound semiconductor light emitting device and method for manufacturing the same

文献类型:专利

作者NIKI, SHIGERU; FONS, PAUL; IWATA, KAKUYA; TANABE, TETSUHIRO; TAKASU, HIDEMI; NAKAHARA, KEN
发表日期2008-04-16
专利号EP1912298A1
著作权人ROHM CO., LTD.
国家欧洲专利局
文献子类发明申请
其他题名ZnO based compound semiconductor light emitting device and method for manufacturing the same
英文摘要A device which has a ZnO based compound layer comprises a sapphire substrate having a main face that is perpendicular to a C-face thereof and a ZnO based compound layer which is epitaxially grown on said main face of said sapphire substrate.
公开日期2008-04-16
申请日期2000-07-26
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/56493]  
专题半导体激光器专利数据库
作者单位ROHM CO., LTD.
推荐引用方式
GB/T 7714
NIKI, SHIGERU,FONS, PAUL,IWATA, KAKUYA,et al. ZnO based compound semiconductor light emitting device and method for manufacturing the same. EP1912298A1. 2008-04-16.

入库方式: OAI收割

来源:西安光学精密机械研究所

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