Semiconductor device, a method for manufacturing a semiconductor device and an epitaxial growth substrate for a semiconductor device
文献类型：专利
| 作者 | SHIBATA, TOMOHIKO; ASAI, KEIICHIRO; NAGAI, TERUYO; TANAKA, MITSUHIRO |
| 发表日期 | 2002-03-07 |
| 专利号 | US20020028343A1 |
| 著作权人 | NGK INSULATORS, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device, a method for manufacturing a semiconductor device and an epitaxial growth substrate for a semiconductor device |
| 英文摘要 | A semiconductor device has a substrate body, an AlxGayInzN (x+y+z=1,x,y,z>=0) film epitaxially grown direct on the substrate body or epitaxially grown via a buffer layer on the substrate body, and a metal film provided on the rear surface of the substrate body. In the case of the manufacturing the semiconductor device, the substrate body is heated, by a heater, uniformly and efficiently through the thermal radiation of the heater. |
| 公开日期 | 2002-03-07 |
| 申请日期 | 2001-03-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/56500]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NGK INSULATORS, LTD. |
| 推荐引用方式 GB/T 7714 | SHIBATA, TOMOHIKO,ASAI, KEIICHIRO,NAGAI, TERUYO,et al. Semiconductor device, a method for manufacturing a semiconductor device and an epitaxial growth substrate for a semiconductor device. US20020028343A1. 2002-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。