Indium gallium nitride smoothing structures for iii-nitride devices
文献类型：专利
| 作者 | GOETZ, WERNER K.; CAMRAS, MICHAEL D.; GARDNER, NATHAN F.; KERN, R. SCOTT; KIM, ANDREW Y.; STOCKMAN, STEPHEN A. |
| 发表日期 | 2002-11-21 |
| 专利号 | US20020171091A1 |
| 著作权人 | LUMILEDS LLC |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Indium gallium nitride smoothing structures for iii-nitride devices |
| 英文摘要 | A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both. |
| 公开日期 | 2002-11-21 |
| 申请日期 | 2001-03-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/56501]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMILEDS LLC |
| 推荐引用方式 GB/T 7714 | GOETZ, WERNER K.,CAMRAS, MICHAEL D.,GARDNER, NATHAN F.,et al. Indium gallium nitride smoothing structures for iii-nitride devices. US20020171091A1. 2002-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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