Pseudomorphic layer in tunnel junction VCSEL
文献类型：专利
| 作者 | RYOU, JAE-HYUN |
| 发表日期 | 2005-01-06 |
| 专利号 | US20050002430A1 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Pseudomorphic layer in tunnel junction VCSEL |
| 英文摘要 | A vertical cavity surface emitting laser (VCSEL) includes an indium-based semiconductor alloy substrate, a first mirror stack over the substrate, an active region having a plurality of quantum wells over the first mirror stack, a tunnel junction over the active region, the tunnel junction including a p-doped pseudomorphically strained layer of a compound selected from the group consisting of Al-rich InAlAs, AlAs, Ga-rich InGaAs, GaAs and combinations thereof, and a second mirror stack over the tunnel junction. The pseudomorphically strained layer can be used to form a tunnel junction with a n-doped layer of InP or AlInAs, or with a lower bandgap material such as AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL. |
| 公开日期 | 2005-01-06 |
| 申请日期 | 2003-07-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/56510]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | RYOU, JAE-HYUN. Pseudomorphic layer in tunnel junction VCSEL. US20050002430A1. 2005-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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