Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element
文献类型：专利
| 作者 | TAKEUCHI, TETSUYA; AKASAKI, ISAMU; AKAGI, TAKANOBU |
| 发表日期 | 2018-06-20 |
| 专利号 | EP3336981A1 |
| 著作权人 | MEIJO UNIVERSITY |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element |
| 英文摘要 | Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror (15) includes an inter-film transition layer (15C) between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer (15C1) formed on the first nitride film and containing In and Al (aluminum), and a second transition layer (15C2) formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al. The mirror is a DBR reflecting in the blue and reducing the number of micro-cracks in the device. The DBR (15) may be integrated into a VCSEL (10), the VCSEL comprising a GaN substrate (11), a GaN buffer layer (13), the DBR (15), a p-clad layer (17), an active layer (20), an upper clad layer p-AlGaN (21), a p-GaN layer (23) and a p-GaN contact layer (25). The first nitride film (15A) may be made from AlInN, the first transition layer (15C1) from AlGaInN, the second transition layer (15C2) from AlGaN and the second nitride film (15B) from GaN. |
| 公开日期 | 2018-06-20 |
| 申请日期 | 2017-12-11 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/56840]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MEIJO UNIVERSITY |
| 推荐引用方式 GB/T 7714 | TAKEUCHI, TETSUYA,AKASAKI, ISAMU,AKAGI, TAKANOBU. Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element. EP3336981A1. 2018-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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