Electro-optical and optoelectronic devices
文献类型：专利
| 作者 | HAHN, UTZ HERWIG; SEIFRIED, MARC |
| 发表日期 | 2018-08-23 |
| 专利号 | US20180240820A1 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Electro-optical and optoelectronic devices |
| 英文摘要 | The present invention is notably directed to an electro-optical device. The latter comprises a layer structure with: a silicon substrate; a buried oxide layer over the silicon substrate; a tapered silicon waveguide core over the buried oxide layer, the silicon waveguide core cladded by a first cladding structure; a bonding layer over the first cladding structure; and a stack of III-V semiconductor gain materials on the bonding layer, the stack of III-V semiconductor gain materials cladded by a second cladding structure. The layer structure is configured to optically couple radiation between the stack of III-V semiconductor gain materials and the tapered silicon waveguide core. The first cladding structure comprises a material having: a refractive index that is larger than 54 for said radiation; and a bandgap, which, in energy units, is larger than an average energy of said radiation. |
| 公开日期 | 2018-08-23 |
| 申请日期 | 2017-02-22 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/57557]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | HAHN, UTZ HERWIG,SEIFRIED, MARC. Electro-optical and optoelectronic devices. US20180240820A1. 2018-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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