Surface emitting laser structure
文献类型：专利
| 作者 | WANG, JONATHAN; HSIEH, PEI-CHIN; WANG, PEI-JIH; CHENG, SHIH-CHIEH |
| 发表日期 | 2018-01-18 |
| 专利号 | US20180019573A1 |
| 著作权人 | TREND LIGHTING CORP. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting laser structure |
| 英文摘要 | A surface emitting laser with improved efficiency includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are only transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields. Heat dissipation and electrical conduction properties are improved by the conductive substrate. Because the epitaxial current-blocking layer is not made by destructive manufacturing method, the efficiency of the surface emitting laser can be improved. |
| 公开日期 | 2018-01-18 |
| 申请日期 | 2017-07-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/57608]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TREND LIGHTING CORP. |
| 推荐引用方式 GB/T 7714 | WANG, JONATHAN,HSIEH, PEI-CHIN,WANG, PEI-JIH,et al. Surface emitting laser structure. US20180019573A1. 2018-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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