Iii-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent
文献类型：专利
| 作者 | YONKEE, BENJAMIN P.; YOUNG, ERIN C.; SPECK, JAMES S.; DENBAARS, STEVEN P.; NAKAMURA, SHUJI |
| 发表日期 | 2019-05-30 |
| 专利号 | US20190165213A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Iii-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent |
| 英文摘要 | A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy. |
| 公开日期 | 2019-05-30 |
| 申请日期 | 2017-08-17 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/57620]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | YONKEE, BENJAMIN P.,YOUNG, ERIN C.,SPECK, JAMES S.,et al. Iii-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent. US20190165213A1. 2019-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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