中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Multimode interference based vpin diode waveguides

文献类型:专利

作者SRINIVASAN, ASHWYN; VAN CAMPENHOUT, JORIS
发表日期2019-06-26
专利号EP3503317A1
著作权人IMEC VZW
国家欧洲专利局
文献子类发明申请
其他题名Multimode interference based vpin diode waveguides
英文摘要The present invention relates to an electro-optical device comprising a vertical p-i-n diode waveguide (100), the device comprising a waveguide portion (900) adapted for propagating a multimode wave, the waveguide portion (900) comprising an intrinsic semiconductor region (510) of the vertical p-i-n diode, a first contact (810) and a second contact (820) for electrically contacting a first electrode (400) and a second electrode (520) of the vertical p-i-n diode. The device also comprises an input section (102) for coupling radiation into the waveguide portion (900) and an output section for coupling radiation out of the waveguide portion (900). The inlet section (102), the output section (104) and the waveguide portion (900) are being configured for inducing a multimode interference pattern for the multimode wave to form an optical field with a lateral inhomogeneous spatial distribution in the waveguide portion (900) comprising regions with higher optical field intensity and regions with lower optical field intensity, the second contact (820) physically contacting the second electrode in at least one region of the waveguide with lower optical field intensity.
公开日期2019-06-26
申请日期2017-12-22
状态申请中
源URL[http://ir.opt.ac.cn/handle/181661/57680]  
专题半导体激光器专利数据库
作者单位IMEC VZW
推荐引用方式
GB/T 7714
SRINIVASAN, ASHWYN,VAN CAMPENHOUT, JORIS. Multimode interference based vpin diode waveguides. EP3503317A1. 2019-06-26.

入库方式: OAI收割

来源:西安光学精密机械研究所

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