Substrate technology for quantum dot lasers integrated on silicon
文献类型：专利
| 作者 | SIRIANI, DOMINIC F.; ANDERSON, SEAN P.; PATEL, VIPULKUMAR |
| 发表日期 | 2019-09-05 |
| 专利号 | US20190273361A1 |
| 著作权人 | CISCO TECHNOLOGY, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Substrate technology for quantum dot lasers integrated on silicon |
| 英文摘要 | A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer. |
| 公开日期 | 2019-09-05 |
| 申请日期 | 2018-03-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/57702]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CISCO TECHNOLOGY, INC. |
| 推荐引用方式 GB/T 7714 | SIRIANI, DOMINIC F.,ANDERSON, SEAN P.,PATEL, VIPULKUMAR. Substrate technology for quantum dot lasers integrated on silicon. US20190273361A1. 2019-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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