Devices with quantum dots
文献类型：专利
| 作者 | LIANG, DI; KURCZVEIL, GEZA; BEAUSOLEIL, RAYMOND G.; FIORENTINO, MARCO |
| 发表日期 | 2019-03-21 |
| 专利号 | US20190089129A1 |
| 著作权人 | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Devices with quantum dots |
| 英文摘要 | An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer. |
| 公开日期 | 2019-03-21 |
| 申请日期 | 2018-09-14 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/57738]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
| 推荐引用方式 GB/T 7714 | LIANG, DI,KURCZVEIL, GEZA,BEAUSOLEIL, RAYMOND G.,et al. Devices with quantum dots. US20190089129A1. 2019-03-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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