Method of removing a substrate with a cleaving technique
文献类型：专利
| 作者 | KAMIKAWA, TAKESHI; GANDROTHULA, SRINIVAS; LI, HONGJIAN |
| 发表日期 | 2019-03-21 |
| 专利号 | WO2019055936A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of removing a substrate with a cleaving technique |
| 英文摘要 | A method of removing a substrate from Ill-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more Ill-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The Ill-nitride based semiconductor layers are bonded to a support substrate or film, and the Ill-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the Ill-nitride based semiconductor layers, due to differences in thermal expansion between the Ill-nitride substrate and the support substrate or film bonded to the Ill-nitride based semiconductor layers, before the Ill-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication. |
| 公开日期 | 2019-03-21 |
| 申请日期 | 2018-09-17 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/57739]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | KAMIKAWA, TAKESHI,GANDROTHULA, SRINIVAS,LI, HONGJIAN. Method of removing a substrate with a cleaving technique. WO2019055936A1. 2019-03-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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