中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Drive for semiconductor laser

文献类型:专利

作者ONO YUZO
发表日期1986-11-25
专利号JP1986265884A
著作权人NEC CORP
国家日本
文献子类发明申请
其他题名Drive for semiconductor laser
英文摘要PURPOSE:To oscillate a semiconductor laser in a stable wavelength even though the luminous which is made constant and the integral energy of the luminous pulse is changed by a method wherein bias current passed at the time of non-light emission of the semiconductor laser and the bias current is modulated by the pulse current of a duty ratio of D at high speed at the time of light emission. CONSTITUTION:When the waveheight value and the offset value of the pulse current are respectively set at IOP and IOS, the power consumption P2 at the time of light emission becomes P2=D.VOP.IOP+(1-D)VOP.IOS. This power consumption P2 must be naturally equal with the power consumption P3=VOP.Ib at the time of non-light emission, but if the D the IOP and the IOS are adjusted, the integral optical energy at the time of light emission can be changed without changing the P2. In this embodi ment, this semiconductor laser is driven in the pulse waveform on a condition of P2=P3. The luminous pulse of the pulse current waveheight value IOP on the right side is a luminous pulse having an integral optical energy smaller than that of the luminous pulse of the pulse current waveheight value IOP on the left side, and the waveheight value and the offset value of the pulse current are respectively changed into the IOP and the IOS, leaving the D intact so that the P2 is satisfied a constant condition.
公开日期1986-11-25
申请日期1985-05-20
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/59419]  
专题半导体激光器专利数据库
作者单位NEC CORP
推荐引用方式
GB/T 7714
ONO YUZO. Drive for semiconductor laser. JP1986265884A. 1986-11-25.

入库方式: OAI收割

来源:西安光学精密机械研究所

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