Semiconductor optical memory
文献类型：专利
| 作者 | KASAHARA KENICHI |
| 发表日期 | 1988-07-23 |
| 专利号 | JP1988179318A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical memory |
| 英文摘要 | PURPOSE:To permit oscillation of light with trigger light in a layer thickness direction by specifying the forbidden band width of respective layers forming a pnpn thyristor. CONSTITUTION:The pnpn thyristor is formed of a cathode layer 42 of n-InP laminated on an n-InP substrate 41, a p-InGaAsP serving as a gate, a 2nd layer 45 of undoped n-InGaAs, a 3rd layer 46 of undoped n-InGaAsP, anode layer 47 of p-InP, etc. The layers 42, 47 are formed wider in the forbidden band width than the layers 43, 45 and the layer 45 is formed narrower in the forbidden band width than the layers 44, 46. Holes are, therefore, absorbed in the layer 43 and the electrons passing the layer 43 increase when a quantity of light is absorbed in the layers 44-46 by the light trigger in the layer thickness direction. The potential gradient generated in the layers 42-44 is then relieved and the holes injected from the layer 47 to the base layer are increased so that the laser oscillation is excited by the conduction in the positive direction. As a result, the oscillation of the light by the trigger light in the layer thickness direction is permitted. |
| 公开日期 | 1988-07-23 |
| 申请日期 | 1987-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/59489]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KASAHARA KENICHI. Semiconductor optical memory. JP1988179318A. 1988-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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