Semiconductor laser integrated device
文献类型：专利
| 作者 | YAMASHITA SHIGEO; TANAKA TOSHIAKI; KAJIMURA TAKASHI |
| 发表日期 | 1989-05-12 |
| 专利号 | JP1989120082A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser integrated device |
| 英文摘要 | PURPOSE:To obtain a structure whose thermal interference between array lasers can be reduced even when an interval between laser beams radiated from the array lasers is narrow by a method wherein two or more semiconductor laser element and at least one reflector are installed on a substrate and at least one laser output light beam is output to the outside via the reflector. CONSTITUTION:Two or more semiconductor laser elements 1, 2 and at least one reflector 5 are installed on a substrate 6; a semiconductor laser integrated device is thus constituted. At least one out of laser output light beams of the semiconductor laser elements 1, 2 is extracted to the outside via the reflector 5. For example, a GaAlAs-based semiconductor laser elements 1, 2 are installed on a submount 6 composed of Si in such a way that their mutual axes of resonators are perpendicular to each other; photodetectors 3, 4 for monitoring use are installed behind the semiconductor laser elements 1 and 2. In addition, a microscopic reflector 5 composed of a plane mirror is installed at a beam output part of the semiconductor laser 1; a laser output light beam is reflected at 90 deg.; its optical axis is made nearly parallel to a laser output light beam of the semiconductor laser 2. |
| 公开日期 | 1989-05-12 |
| 申请日期 | 1987-11-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/59540]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,TANAKA TOSHIAKI,KAJIMURA TAKASHI. Semiconductor laser integrated device. JP1989120082A. 1989-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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