Semiconductor laser modulating device
文献类型:专利
作者 | NAGASAWA KIYOTO |
发表日期 | 1989-12-21 |
专利号 | JP1989316762A |
著作权人 | 株式会社リコー |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser modulating device |
英文摘要 | PURPOSE:To enable gradational representation and to increase the degree of freedom of the setting of write gradations corresponding to image data by modulating a semiconductor laser with the image data which is converted by a data converting means. CONSTITUTION:A temperature detecting element 46 consisting of a thermistor is arranged nearby a laser diode 22 to detect its temperature and the output Vt obtained by dividing a source voltage by the temperature detecting element 46 and a resistance 56 is converted by an analog/digital converter 47 from analog to digital and supplied as a select signal SEL to a ROM 43. As the temperature increases, the thermistor 46 decreases in resistance value, so the output Vt increases and the signal SEL increases. When the temperature is lowered, on the other hand, the signal SEL decreases. Thus, a modulating means modulates the semiconductor laser with the image data converted by the data converting means. Consequently, the superior gradational representation is enabled and the degree of freedom of the setting of write gradations corresponding to the image data is increased. |
公开日期 | 1989-12-21 |
申请日期 | 1988-06-17 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/59574] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 株式会社リコー |
推荐引用方式 GB/T 7714 | NAGASAWA KIYOTO. Semiconductor laser modulating device. JP1989316762A. 1989-12-21. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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