Detector for deterioration of semiconductor laser
文献类型:专利
作者 | IWAKI TAKASHI; NUMATA TOMIYUKI; YAMAGUCHI TAKESHI; DEGUCHI TOSHIHISA |
发表日期 | 1991-08-09 |
专利号 | JP1991183181A |
著作权人 | SHARP CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Detector for deterioration of semiconductor laser |
英文摘要 | PURPOSE:To accurately detect the aging of a semiconductor laser by comparing a variation in differential coefficient intrinsic to the semiconductor laser with the initial value. CONSTITUTION:Data of the initial differential coefficient eta1 of a semiconductor laser which makes normal actions is predetermined and stored in a memory part 42. A semiconductor laser 10 is operated by set values of drive currents I1, I2, where optical outputs P1, P2 of the semiconductor laser are detected by the detection part 30. A differential coefficient operation part 41 calculates the differential coefficient eta2 of a present semiconductor laser from operation expression (P1-P2)/(I1-I2) to enter the data of calculated differential coefficient eta2 into a comparison part 43. The comparison part compares differential coefficient eta2 intrinsic to the present semiconductor laser with the initial differential coefficient eta1 intrinsic to the initial semiconductor laser. The aging of the semiconductor laser is judged from this result of comparison. |
公开日期 | 1991-08-09 |
申请日期 | 1989-12-12 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/59656] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | IWAKI TAKASHI,NUMATA TOMIYUKI,YAMAGUCHI TAKESHI,et al. Detector for deterioration of semiconductor laser. JP1991183181A. 1991-08-09. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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