Multibeam semiconductor laser
文献类型:专利
作者 | SHIMA AKIHIRO |
发表日期 | 1991-08-15 |
专利号 | JP1991187285A |
著作权人 | MITSUBISHI ELECTRIC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Multibeam semiconductor laser |
英文摘要 | PURPOSE:To prevent the optical inference between each laser diode chip so that each laser diode chip may be driven independently by widening the luminous stripe width near the end face on, at least, the photodiode side of a laser diode chip than the luminous stripe width on the other end face side. CONSTITUTION:The widths of the luminous stripes 10a-10c on, at least, the rear of each laser diode chip 1a-1c, that is, on the photodiode 2a-2c sides for monitors are made wider than the luminous stripe widths on the light emission side at the front. This way, by the luminous stripes 10a-10c whose widths are wide only on the rear sides, the laser beams on the rear sides are made narrow beams, and the rear beams enter favorably the photodiodes 2a-2c for monitors on the rear sides. Accordingly, trouble disappears such as that one part each of the rear beams reach adjacent photodiodes for monitors, so the optical interference of each laser beam lessens. Hereby, the optical interference between each laser diode chip can be prevented, and each laser can independently be driven. |
公开日期 | 1991-08-15 |
申请日期 | 1989-12-15 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/59657] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | SHIMA AKIHIRO. Multibeam semiconductor laser. JP1991187285A. 1991-08-15. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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