Reception/emission compound element
文献类型：专利
| 作者 | YAZAWA YOSHIAKI; MINEMURA HIROYUKI; MINEMURA TETSUO |
| 发表日期 | 1992-07-29 |
| 专利号 | JP1992207079A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Reception/emission compound element |
| 英文摘要 | PURPOSE:To enable a light-emitting element and a light-receiving element to be compound in a simple structure by setting a light-emitting diode or a main terminal of one of a laser diode and a photo diode to a common potential without using a wiring. CONSTITUTION:A p-type conductive type silicon is used as a first semiconductor substrate 1 and an n-type impurities layer where phosphor or arsenic is doped is formed as a second conductive type impurities layer 2. A double-layer gallium arsenide layer is formed on this n-type impurities layer 2, an impurities layer 6 at a side which contacts an Si substrate is formed as an n-type impurities layer by doping silicon or tellurium, and then beryllium or zinc is doped to an impurities layer 7 on it, thus forming a p-type impurities layer. A pn junction between the p-type Si substrate 1 and the n-type impurities layer 2 is formed as a photo diode and is used as a light-receiving element. A light-emitting diode is formed by the n-type impurities layer 6 and the p-type impurities layer 7 of GaAs and is used as a light-emitting element and an electrode which is formed on a from a first main surface of the Si substrate 1 to the n-type impurities layer 2 is used as a common electrode 8. |
| 公开日期 | 1992-07-29 |
| 申请日期 | 1990-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/59702]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | YAZAWA YOSHIAKI,MINEMURA HIROYUKI,MINEMURA TETSUO. Reception/emission compound element. JP1992207079A. 1992-07-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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