Stripe laser diode having an improved efficiency for current confinement
文献类型：专利
| 作者 | KONDO, MAKOTO, C/O FUJITSU LIMITED; FURUYA, AKIRA, C/O FUJITSU LIMITED; ANAYAMA, CHIKASHI, C/O FUJITSU LIMITED; SUGANO, MAMI, C/O FUJITSU LIMITED; DOMEN, KAY, C/O FUJITSU LIMITED; TANAHASHI, TOSHIYUKI, C/O FUJITSU LIMITED; SEKIGUCHI, HIROSHI, C/O FUJITSU LIMITED |
| 发表日期 | 1993-11-03 |
| 专利号 | EP0533197A3 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Stripe laser diode having an improved efficiency for current confinement |
| 英文摘要 | A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure (301 a) defined by a plurality of crystallographically distinct surfaces (303b1, 303b2, 301c) on a surface of a semiconductor substrate (300); forming an epitaxial layer (305, 307) of InGaAIP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, AI and P; wherein the InGaAIP layer is doped to the p-type by incorporating Mg while growing the InGaAIP by adding a gaseous source material of Mg into said source materials of In, Ga, AI and P such that the InGaAIP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure. |
| 公开日期 | 1993-11-03 |
| 申请日期 | 1992-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/59811]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | KONDO, MAKOTO, C/O FUJITSU LIMITED,FURUYA, AKIRA, C/O FUJITSU LIMITED,ANAYAMA, CHIKASHI, C/O FUJITSU LIMITED,et al. Stripe laser diode having an improved efficiency for current confinement. EP0533197A3. 1993-11-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。