Metal casing for semiconductor device having high thermal conductivity and thermal expansion coefficient similar to that of semiconductor and method for manufacturing the same
文献类型：专利
| 作者 | TSUJIOKA, MASANORI; MATSUMURA, JUNZOH |
| 发表日期 | 2003-02-05 |
| 专利号 | EP1282166A2 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Metal casing for semiconductor device having high thermal conductivity and thermal expansion coefficient similar to that of semiconductor and method for manufacturing the same |
| 英文摘要 | A powder metallurgy injection molding process using infiltration to manufacture net-shape products comprising steps of mixing tungsten powder and nickel powder having average particle sizes equal to or less than 40 µm so as to form mixed metal powder, kneading the mixed metal powder with an organic binder so as to form'a admixture, injection molding said admixture so as to form a predetermined green shape, debinderizing said green shape and infiltrating copper into the green shape so as to produce a net-shape product. |
| 公开日期 | 2003-02-05 |
| 申请日期 | 1994-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/59925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | TSUJIOKA, MASANORI,MATSUMURA, JUNZOH. Metal casing for semiconductor device having high thermal conductivity and thermal expansion coefficient similar to that of semiconductor and method for manufacturing the same. EP1282166A2. 2003-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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