中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface emission semiconductor laser

文献类型:专利

作者KAWASE, TAKEO; KANEKO, TAKEO
发表日期1999-08-11
专利号EP0935321A1
著作权人SEIKO EPSON CORPORATION
国家欧洲专利局
文献子类发明申请
其他题名Surface emission semiconductor laser
英文摘要In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations and switching of the polarization plane depending on the optical output and the environmental temperature, a strain generating section (19) is arranged adjacent to a resonator (10B) of a semiconductor laser. The strain generating section (19) impresses anisotropic stress to the resonator (10B) to generate strain, resulting in birefringence and dependence of the gain on the polarization in the resonator (10A). This enables stabilized control of the polarization plane.
公开日期1999-08-11
申请日期1998-07-23
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/60208]  
专题半导体激光器专利数据库
作者单位SEIKO EPSON CORPORATION
推荐引用方式
GB/T 7714
KAWASE, TAKEO,KANEKO, TAKEO. Surface emission semiconductor laser. EP0935321A1. 1999-08-11.

入库方式: OAI收割

来源:西安光学精密机械研究所

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