Surface emission semiconductor laser
文献类型:专利
作者 | KAWASE, TAKEO; KANEKO, TAKEO |
发表日期 | 1999-08-11 |
专利号 | EP0935321A1 |
著作权人 | SEIKO EPSON CORPORATION |
国家 | 欧洲专利局 |
文献子类 | 发明申请 |
其他题名 | Surface emission semiconductor laser |
英文摘要 | In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations and switching of the polarization plane depending on the optical output and the environmental temperature, a strain generating section (19) is arranged adjacent to a resonator (10B) of a semiconductor laser. The strain generating section (19) impresses anisotropic stress to the resonator (10B) to generate strain, resulting in birefringence and dependence of the gain on the polarization in the resonator (10A). This enables stabilized control of the polarization plane. |
公开日期 | 1999-08-11 |
申请日期 | 1998-07-23 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/60208] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SEIKO EPSON CORPORATION |
推荐引用方式 GB/T 7714 | KAWASE, TAKEO,KANEKO, TAKEO. Surface emission semiconductor laser. EP0935321A1. 1999-08-11. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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