Transistor and semiconductor device
文献类型：专利
| 作者 | KAWASAKI, MASASHI; OHNO, HIDEO |
| 发表日期 | 2000-05-25 |
| 专利号 | WO2000030183A1 |
| 著作权人 | JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Transistor and semiconductor device |
| 英文摘要 | A transistor using a transparent channel layer consisting of such material as zinc oxide and being transparent entirely or partially, wherein a channel layer (11) is formed of a transparent semiconductor such as zinc oxide ZnO, part or all of each of sources (12) and drains (13) or gates (14) use transparent electrodes, and the transparent electrodes use a transparent conductive material such as conductive ZnO formed by doping a group III element or the like. A gate insulating layer (15) uses a transparent insulating material such as insulating ZnO formed by doping a univalent element or a group V element. A substrate (16), if its transparency is desired, uses glass, sapphire, plastics or the like as a transparent material. |
| 公开日期 | 2000-05-25 |
| 申请日期 | 1999-11-11 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/60330]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
| 推荐引用方式 GB/T 7714 | KAWASAKI, MASASHI,OHNO, HIDEO. Transistor and semiconductor device. WO2000030183A1. 2000-05-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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