Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same
文献类型:专利
作者 | SASAGAWA TOMOHIRO; TOKIOKA HIDETADA; FURUTA KEISUKE; NISHIMAE JUNICHI; SATO YUKIO; OKAMOTO TATSUKI; OGAWA TETSUYA; INOUE MITSUO |
发表日期 | 2000-12-25 |
专利号 | CA2312223A1 |
著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
国家 | 加拿大 |
文献子类 | 发明申请 |
其他题名 | Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same |
英文摘要 | An optical system that controls laser beam spot profile for forming a high performance thin film by a laser heat treatment process is provided. In the optical system that irradiates a rectangular laser beam on a film formed on a substrate, intensity distribution forming means makes the intensity distribution uniform in the longitudinal direction while maintaining the properties of the laser beam 2 such as directivity in the direction of shorter side, thereby making it possible to concentrate the light to a limit permitted by the nature of the laser beam and achieve the maximum intensity gradient on the film disposed on the substrate. Thus a steep temperature distribution can be generated on the film disposed on the substrate and, as a result, high performance thin film can be formed. |
公开日期 | 2000-12-25 |
申请日期 | 2000-06-23 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/60450] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | SASAGAWA TOMOHIRO,TOKIOKA HIDETADA,FURUTA KEISUKE,et al. Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same. CA2312223A1. 2000-12-25. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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