Semiconductor laser device, method for producing the same, and optical disk device
文献类型：专利
| 作者 | SUGAHARA, GAKU; KIDOGUCHI, ISAO; MIYANAGA, RYOKO; SUZUKI, MASAKATSU; KUME, MASAHIRO; BAN, YUSABURO; HIRAYAMA, FUKUKAZU |
| 发表日期 | 2001-12-19 |
| 专利号 | EP1164669A1 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device, method for producing the same, and optical disk device |
| 英文摘要 | A semiconductor laser device (10) includes a resonant cavity (12) in which a quantum well active layer (11) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film (13) is formed on a reflective end facet (10b) opposite to a light-emitting end facet (10a) in the resonant cavity (12). The end facet reflective film (13) has a structure including a plurality of unit reflective films (130), each of which is made up of a low-refractive-index film (13a) of silicon dioxide and a high-refractive-index film (13b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity (12). |
| 公开日期 | 2001-12-19 |
| 申请日期 | 2000-11-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/60550]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | SUGAHARA, GAKU,KIDOGUCHI, ISAO,MIYANAGA, RYOKO,et al. Semiconductor laser device, method for producing the same, and optical disk device. EP1164669A1. 2001-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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