High-powered semiconductor laser array apparatus
文献类型：专利
| 作者 | TAKAYAMA, TORU; YURI, MASAAKI; TAMAI, SEIICHIRO; ITO, KUNIO; KAZUMURA, MASARU |
| 发表日期 | 2003-04-23 |
| 专利号 | EP1146617A3 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | High-powered semiconductor laser array apparatus |
| 英文摘要 | A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other. |
| 公开日期 | 2003-04-23 |
| 申请日期 | 2001-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/60629]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAKAYAMA, TORU,YURI, MASAAKI,TAMAI, SEIICHIRO,et al. High-powered semiconductor laser array apparatus. EP1146617A3. 2003-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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