中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device

文献类型:专利

作者YURI, MASAAKI; TAMAI, SEIICHIRO; ITO, KUNIO; KAZUMURA, MASARU
发表日期2001-10-18
专利号US20010030983A1
著作权人MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
国家美国
文献子类发明申请
其他题名Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device
英文摘要To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional.
公开日期2001-10-18
申请日期2001-04-02
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/60631]  
专题半导体激光器专利数据库
作者单位MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式
GB/T 7714
YURI, MASAAKI,TAMAI, SEIICHIRO,ITO, KUNIO,et al. Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device. US20010030983A1. 2001-10-18.

入库方式: OAI收割

来源:西安光学精密机械研究所

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