Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device
文献类型:专利
作者 | YURI, MASAAKI; TAMAI, SEIICHIRO; ITO, KUNIO; KAZUMURA, MASARU |
发表日期 | 2001-10-18 |
专利号 | US20010030983A1 |
著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device |
英文摘要 | To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional. |
公开日期 | 2001-10-18 |
申请日期 | 2001-04-02 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/60631] |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
推荐引用方式 GB/T 7714 | YURI, MASAAKI,TAMAI, SEIICHIRO,ITO, KUNIO,et al. Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device. US20010030983A1. 2001-10-18. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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