中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device

文献类型:专利

作者TANAKA, KOICHIRO
发表日期2002-12-19
专利号US20020191301A1
著作权人SEMICONDUCTOR ENERGY LABORATORY CO., LTD
国家美国
文献子类发明申请
其他题名Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
英文摘要As the output of laser oscillators become higher, it becomes necessary to develop a longer linear shape beam for a process of laser annealing of a semiconductor film. However, if the length of the linear shape beam is from 300 to 1000 mm, or greater, then the optical path length of an optical system for forming the linear shape beam becomes very long, thereby increasing its footprint size. The present invention shortens the optical path length. In order to make the optical path length of the optical system as short as possible, and to increase only the length of the linear shape beam, curvature may be given to the semiconductor film in the longitudinal direction of the linear shape beam. For example, if the size of the linear shape beam is taken as 1 mx0.4 mm, then it is necessary for the optical path length of the optical system to be on the order of 10 m. If, however, the semiconductor film is given curvature with a radius of curvature of 40,000 mm, then the optical path length of the optical system can be halved to approximately 5 m, and a linear shape beam having an extremely uniform energy distribution can be obtained.
公开日期2002-12-19
申请日期2002-06-14
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/60841]  
专题半导体激光器专利数据库
作者单位SEMICONDUCTOR ENERGY LABORATORY CO., LTD
推荐引用方式
GB/T 7714
TANAKA, KOICHIRO. Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device. US20020191301A1. 2002-12-19.

入库方式: OAI收割

来源:西安光学精密机械研究所

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