Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
文献类型：专利
| 作者 | TANAKA, KOICHIRO; MORIWAKA, TOMOAKI |
| 发表日期 | 2003-03-27 |
| 专利号 | US20030058916A1 |
| 著作权人 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device |
| 英文摘要 | If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface. |
| 公开日期 | 2003-03-27 |
| 申请日期 | 2002-08-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/60863]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 推荐引用方式 GB/T 7714 | TANAKA, KOICHIRO,MORIWAKA, TOMOAKI. Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device. US20030058916A1. 2003-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。