Semiconductor Laser Device and Method for Fabrication Thereof
文献类型：专利
| 作者 | UCHIDA, YOZO; NAKASHIMA, KENJI; KAWAMOTO, SEIJI |
| 发表日期 | 2008-10-09 |
| 专利号 | US20080247439A1 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor Laser Device and Method for Fabrication Thereof |
| 英文摘要 | In a semiconductor laser device (LD1), a semiconductor laser layer is formed on one face of a semiconductor substrate (1), and a p-type electrode (8) and an n-type electrode (11) are provided on the semiconductor laser layer side and the semiconductor substrate (1) side, respectively, so as to sandwich the semiconductor laser layer and the semiconductor substrate (1) therebetween. The p-type electrode (8) includes a first electrode (9) and a second electrode (10) that covers the first electrode (9). |
| 公开日期 | 2008-10-09 |
| 申请日期 | 2005-03-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/61201]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | UCHIDA, YOZO,NAKASHIMA, KENJI,KAWAMOTO, SEIJI. Semiconductor Laser Device and Method for Fabrication Thereof. US20080247439A1. 2008-10-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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