Laser diode having an active layer containing N and operable in a 0.6mum wavelength band
文献类型：专利
| 作者 | JIKUTANI, NAOTO; SATO, SHUNICHI; TAKAHASHI, TAKASHI |
| 发表日期 | 2005-10-27 |
| 专利号 | US20050238075A1 |
| 著作权人 | RICOH COMPANY, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode having an active layer containing N and operable in a 0.6mum wavelength band |
| 英文摘要 | An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less. |
| 公开日期 | 2005-10-27 |
| 申请日期 | 2005-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/61208]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH COMPANY, LTD. |
| 推荐引用方式 GB/T 7714 | JIKUTANI, NAOTO,SATO, SHUNICHI,TAKAHASHI, TAKASHI. Laser diode having an active layer containing N and operable in a 0.6mum wavelength band. US20050238075A1. 2005-10-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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