Semiconductor Laser Device and Method for Fabricating Same
文献类型：专利
| 作者 | HASEGAWA, YOSHIAKI; YOKOGAWA, TOSHIYA; YAJIMA, HIROYOSHI |
| 发表日期 | 2008-02-28 |
| 专利号 | US20080049800A1 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor Laser Device and Method for Fabricating Same |
| 英文摘要 | A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C. |
| 公开日期 | 2008-02-28 |
| 申请日期 | 2005-06-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/61238]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | HASEGAWA, YOSHIAKI,YOKOGAWA, TOSHIYA,YAJIMA, HIROYOSHI. Semiconductor Laser Device and Method for Fabricating Same. US20080049800A1. 2008-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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