Thermal FLUX laser annealing for ion implantation of semiconductor p-n junctions
文献类型：专利
| 作者 | ADAMS, BRUCE, E.; JENNINGS, DEAN; MAYUR, ABHILASH, J.; PARHIHAR, VIJAY; RANISH, JOSEPH, M. |
| 发表日期 | 2007-02-15 |
| 专利号 | WO2007018567A1 |
| 著作权人 | APPLIED MATERIALS, INC. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Thermal FLUX laser annealing for ion implantation of semiconductor p-n junctions |
| 英文摘要 | A method for forming P-N junctions in a semiconductor wafer includes ion implanting dopant impurities into the wafer and annealing the wafer using a thermal flux laser annealing apparatus that includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis. |
| 公开日期 | 2007-02-15 |
| 申请日期 | 2005-10-12 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/61272]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED MATERIALS, INC. |
| 推荐引用方式 GB/T 7714 | ADAMS, BRUCE, E.,JENNINGS, DEAN,MAYUR, ABHILASH, J.,et al. Thermal FLUX laser annealing for ion implantation of semiconductor p-n junctions. WO2007018567A1. 2007-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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