Laser treatment apparatus and method of manufacturing semiconductor device
文献类型：专利
| 作者 | YAMAZAKI, SHUNPEI |
| 发表日期 | 2007-08-30 |
| 专利号 | US20070201119A1 |
| 著作权人 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser treatment apparatus and method of manufacturing semiconductor device |
| 英文摘要 | A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an fθ lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed. The number of optical systems is not limited; any number of optical systems is allowed as long as a means for supplying a plurality of laser beams is provided. |
| 公开日期 | 2007-08-30 |
| 申请日期 | 2007-04-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/61416]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 推荐引用方式 GB/T 7714 | YAMAZAKI, SHUNPEI. Laser treatment apparatus and method of manufacturing semiconductor device. US20070201119A1. 2007-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。