Transistor laser optical switching and memory techniques and devices
文献类型：专利
| 作者 | FENG, MILTON; HOLONYAK, JR., NICK; WU, MONG-KAI |
| 发表日期 | 2016-01-21 |
| 专利号 | US20160020579A1 |
| 著作权人 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Transistor laser optical switching and memory techniques and devices |
| 英文摘要 | A ring cavity light-emitting transistor device, including: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with the base layer, said collector layer, and said emitter layer, the base metalization including at least one annular ring coupled with a surface of the base layer; and an annular ring-shaped optical resonator in a region of the semiconductor structure generally including the interface of the base and emitter regions; whereby application of electrical signals with respect to the base, collector, and emitter metalizations causes light emission in the base layer that propagates in the ring-shaped optical resonator cavity. |
| 公开日期 | 2016-01-21 |
| 申请日期 | 2015-05-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62019]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 推荐引用方式 GB/T 7714 | FENG, MILTON,HOLONYAK, JR., NICK,WU, MONG-KAI. Transistor laser optical switching and memory techniques and devices. US20160020579A1. 2016-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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