Apparatus and method for determining the active dopant profile in a semiconductor wafer
文献类型：专利
| 作者 | BORDEN, PETER, G.; NIJMEIJER, REGINA, G. |
| 发表日期 | 2002-04-03 |
| 专利号 | EP1192444A1 |
| 著作权人 | APPLIED MATERIALS, INC. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| 英文摘要 | A method creates charge carriers in a concentration that changes in a periodic manner with respect to time, and determines the number of charge carriers created by measuring an interference signal between a reference beam and a probe beam that is reflected by charge carriers at various depths of the semiconductor material, and compares the measurement with corresponding values obtained by simulation. Various properties of the reflected portion of the probe beam (such as power and phase) are functions of the depth at which the reflection occurs. Alternatively, a phase difference between a first interference signal (obtained by interference of a variable phase beam and the portion of probe beam reflected by the front surface) and a second interference signal (obtained by interference of the variable phase beam and a portion of the probe beam reflected by charge carriers at various depths) indicates the junction depth. |
| 公开日期 | 2002-04-03 |
| 申请日期 | 2000-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62458]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED MATERIALS, INC. |
| 推荐引用方式 GB/T 7714 | BORDEN, PETER, G.,NIJMEIJER, REGINA, G.. Apparatus and method for determining the active dopant profile in a semiconductor wafer. EP1192444A1. 2002-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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