Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level
文献类型:专利
作者 | TAKEUCHI, HIDEO; YAMAMOTO, YOSHITSUGU |
发表日期 | 2006-05-04 |
专利号 | US20060094133A1 |
著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level |
英文摘要 | A pump beam irradiates the surface of a semiconductor sample through modulator while irradiating the surface with a probe beam so that a detector measures a light-modulated spectrum of the probe beam reflected from the surface of the semiconductor sample. Then, surface electric field strength is calculated from the period of Franz-Keldysh oscillations appearing in the light-modulated spectrum, and the surface recombination velocity and surface Fermi level are calculated based on a relation between the surface electric field strength and the probe beam power density. |
公开日期 | 2006-05-04 |
申请日期 | 2005-10-24 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/62500] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | TAKEUCHI, HIDEO,YAMAMOTO, YOSHITSUGU. Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level. US20060094133A1. 2006-05-04. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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