Edge-Coupled Semiconductor Photodetector
文献类型：专利
| 作者 | WANG, SAMUEL C.; LAO, PETER; KUMAR, DHIRAJ |
| 发表日期 | 2018-06-28 |
| 专利号 | US20180180468A1 |
| 著作权人 | GLOBAL COMMUNICATION SEMICONDUCTORS, LLC |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Edge-Coupled Semiconductor Photodetector |
| 英文摘要 | A device is disclosed for monitoring power from a laser diode. The device includes a substrate having a top surface and a first facet perpendicular to the top surface through which light enters the substrate. The device further includes a second facet onto which light that has entered the substrate through the first facet along an optical axis that is non-normal to the first facet is incident. The device further includes a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate along the optical axis that is non-normal to the first facet. The light that has entered the substrate through the first facet along the optical axis that is non-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode. |
| 公开日期 | 2018-06-28 |
| 申请日期 | 2017-08-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62572]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GLOBAL COMMUNICATION SEMICONDUCTORS, LLC |
| 推荐引用方式 GB/T 7714 | WANG, SAMUEL C.,LAO, PETER,KUMAR, DHIRAJ. Edge-Coupled Semiconductor Photodetector. US20180180468A1. 2018-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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