Method of measuring threshold current of semiconductor laser and device thereor
文献类型：专利
| 作者 | SEKIDO KENJI |
| 发表日期 | 1982-05-12 |
| 专利号 | JP1982075480A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of measuring threshold current of semiconductor laser and device thereor |
| 英文摘要 | PURPOSE:To contrive a simple method of measuring a threshold value and to exactly measure a threshold value by utilizing the fact that the luminous modulation cut off frequency of a semiconductor laser is the difference between the spontaneous emission emitting light and the laser emitting light. CONSTITUTION:Bias current is supplied to a semiconductor laser 1 from the first bias power source 2 through a DC ammeter 3 and a choke coil 4. Furthermore, a modulation signal having higher oscillation frequency than the modulation cut off frequency of the spontaneous emission LED light emitting of the laser 1 and that lower than the modulation cut off frequency of the laser emitting light is generated from a modulation signal power source 5 to superimpose the modulation signal on the bias current of the laser 1 through a capacitor 6. The light output from the laser 1 is received by a light sensitive photo diode 7 and a suitable reverse bias is applied to the light sensitive photo deiode 7 by the second bias current source 10 to supervise a modulated component detected by a detector 12 by a voltmeter 13. And the current of the laser 1 is gradually increased by the power source 2 and a current value detecting or distinguishing a modulation signal component at the light output is measured to use the current value as a threshold value. |
| 公开日期 | 1982-05-12 |
| 申请日期 | 1980-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62589]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | SEKIDO KENJI. Method of measuring threshold current of semiconductor laser and device thereor. JP1982075480A. 1982-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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