Measuring method for thermal resistance of semiconductor laser
文献类型：专利
| 作者 | NAKASHIMA MASATO; SEKIDO KENJI |
| 发表日期 | 1982-05-27 |
| 专利号 | JP1982085276A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Measuring method for thermal resistance of semiconductor laser |
| 英文摘要 | PURPOSE:To measure the thermal resistance accurately by substantially measuring the value of a temperature coefficient at every laser to be measured and fixing the magnitude of bias currents at predetermined value. CONSTITUTION:DC bias currents IO are applied to the semiconductor laser to be measured 1 by means of a DC power supply, and power PO consumed at the laser 1 at that time, the value QO of a temperature parameter of the laser 1 and the temperature TCO of a case are measured. Pulse bias currents having IO peak value and a d duty cycle are applied by means of a pulse power supply 11, and the quantity of change DELTAPO of the power PO consumed at the laser 1 at that time and the quantity DELTATC of change of the case temperature TCO of the laser 1 required for equalizing the value of a temperature sensing parameter with the original value QO by adding an external heat source are measured. Accordingly, the thermal resistance Rth of the laser 1 is given DELTATC/DELTAPO. |
| 公开日期 | 1982-05-27 |
| 申请日期 | 1980-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/62590]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | NAKASHIMA MASATO,SEKIDO KENJI. Measuring method for thermal resistance of semiconductor laser. JP1982085276A. 1982-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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